t4 - lds - 0211 - 1, rev . 1 (111 900 ) ?2011 microsemi corporation page 1 of 5 1n5802us, 1n5804us, 1n5806us and urs available on commercial versions voidless hermetically sealed ultrafast recovery glass rectifiers qualified per mil -prf- 19500/477 qualified levels : jan, jantx, jantxv and jans d escription this ultrafast recovery rectifier diode series is military qualified and is i deal for high - reliability applications where a failure cannot be tolerated. the industry - recognized 2.5 a mp rated rectifiers with working peak reverse voltage s fro m 50 to 150 volts are hermetically sealed with voidless glass construction using an internal category 1 metallurgical bond. these devices are available in both surface mount melf and leaded package configurations. microsemi also offers numerous other r ectifier products to meet higher and lower current ratings with various recover y time requirements including standard, fast and ultrafast device types in both through - hole and surface mount packages. a or d- 5a package (us) a package (u rs) also available in : a package ( axial - leaded ) 1n5802, 04 and 06 important: for the latest information, visit our website http://www.m icrosemi.com . features ? jedec registered surface mount equivalent of 1n5 802, 1n5804, 1n5806 series . ? v oidless hermetically sealed glass package . ? quadruple - layer passivation ? extremely robust construction. ? internal category 1 metallurgical bond s. ? jan, jantx, jantxv and jans qualifi cations are available per mil - prf - 19500/477 . ? rohs compliant versions available (commercial grade only) . applications / benefits ? ultrafast recovery 2.5 amp rectifier series from 50 to 150 v. ? military, s pace and other high - re liability applications. ? switching power supplies or other applications requiring extremely fast switching & lo w forward loss. ? high forward surge current capability. ? low thermal resistance. ? controlled avalanche with peak reverse power capability. ? inherentl y radiation hard as described in microsemi micronote 050 . m axim um ratings @ t a = 25 o c unless otherwise specified msc C law rence 6 lake street, lawrence, ma 01841 tel: 1- 800 - 446 - 1158 or (978) 620 - 2600 fax: (978) 689 - 0803 msc C ireland gort road business park, ennis, co. clare, ireland tel: +353 (0) 65 6840044 fax: +353 (0) 65 6822298 website: www.microsemi.com parameters/test conditions symbol value unit junction and storage temp erature t j and t stg - 65 to +1 75 o c thermal resistance junction - to - end cap (see figure 1 ) r ? j ec 13 o c /w working peak reverse voltage: 1n5802 us & urs 1n5804 us & urs 1n5806 us & urs v rw m 50 100 150 v forward surge current (3) i fsm 35 a average rectified output current @ t ec = +75 o c (1) i o1 2.5 a average rectified output - current @ t a = +55 o c (2) i o2 1.0 a capacitance @ v r = 10 v, f = 1 mhz; vsig = 50 mv (p - p) c 25 pf reverse recovery time (4) t rr 25 ns solder temperature @ 10 s t sp 260 o c notes : 1. i o1 is rated at 2.5 a @ t ec = 75 o c. derate at 50 ma/ o c for t ec above 125 o c. 2. i o2 is rated at 1.0 a @ t a = 55 o c for pc boards where thermal resistance from mounting point to ambi ent is s ufficiently co ntrolled (r ? jx < 154 o c/w) where t j(max) 175 o c is not exceeded. derate at 8.33 ma/ o c for t a above 55 o c. 3. t a = 25 o c @ i o = 1.0 a and v rwm for ten 8.3 ms surges at 1 minute intervals. 4. i f = 0.5 a, i rm = 0.5 a, i r(rec) = .05 a. downloaded from: http:///
t4 - lds - 0211 - 1, rev . 1 (111 900 ) ?2011 microsemi corporation page 2 of 5 1n5802us, 1n5804us, 1n5806us and urs mechanical and packaging ? case: hermetically sealed voidless hard glass with t ungsten slugs. ? terminal s: tin/ l ead (sn/pb) or rohs compliant matte/ t in (commercial grade only) over ni ckel plate over c opper. ? marking: b ody painted and part number . ? polarity: cathode indicated by band . ? tape & reel option: standard per eia - 481 -b . consult factory for quantities. ? w eight: 193 milligrams. ? see p ackage d imensions on last page. part nomenclature jan 1n5802 us (e3) reliability level jan = jan l evel jantx = jantx level jantxv = jantxv level jans = jans level blank = commercial jedec type number (see electrical characteristics table) rohs compliance e3 = rohs c ompliant ( available on commercial grade only ) blank = non - rohs c ompliant surface mount package type us = 2 square end caps urs = 1 square + 1 round end cap symbols & definitions symbol definition v br minimum breakdown voltage: the minimum voltage the device will exhibit at a specified c urrent . v rw m working peak reverse voltage: the maximum peak voltage that can be applied over the operating temperature range . i o average rectified output current: output c urrent a veraged over a full cycle with a 50 hz or 60 hz sine - wave input and a 180 degree conduction angle . v f maximum forward voltage: the maximum forward voltage the device will exhibit at a specified curr ent . i r maximum leakage current: the maximum leakage current that will flow at the specified voltage and t emperature . c capaci tance: the capacitance in pf at a frequency of 1 mhz and specified voltage. t rr reverse recovery time: the time interval between the instant the current passes through zero when changing f rom the forward direction to the reverse direction and a specified recovery decay point after a peak reverse c urrent occurs. electrical characteristics breakdown voltage (min.) @ 100 a v (br) maximum forward voltage @ 8.3 ms pulse v fm reverse current (max.) @ v rw m i r surge current (max) i fsm (note 1) reverse recovery time (max) t rr (note 2) thermal impedance @ t h = 10 ms z ? jx (note 3) type volts volts a amps ns o c/w i f = 1.0 a i f = 2.5 a 25 o c 125 o c 1n5802 us & urs 60 0.875 0.975 1 175 35 25 4.0 1n5804 us & urs 110 0.875 0.975 1 175 35 25 4.0 1n5806 us & urs 160 0.875 0.975 1 175 35 25 4.0 notes: 1. t a = 2.5 o c @ i o = 1.0 a and v rwm for ten 8.3 ms surges at 1 minute intervals (i fsm surge is also a maximum rating). 2. i f = 0.5 a, i rm = 0.5 a, i r(rec) = .05 a (t rr reverse recovery tim e is also a maximum rating). 3. for the complete thermal impedance curve over a broad range of heating times, see figure 1 . downloaded from: http:///
t4 - lds - 0211 - 1, rev . 1 (111 900 ) ?2011 microsemi corporation page 3 of 5 1n5802us, 1n5804us, 1n5806us and urs graphs heating time (sec) figure 1 maximum thermal impedance i o (a) figure 2 rectifier p ower v ersus i o (a verage f orward c urrent) theta ( o c/w ) p o (w) downloaded from: http:///
t4 - lds - 0211 - 1, rev . 1 (111 900 ) ?2011 microsemi corporation page 4 of 5 1n5802us, 1n5804us, 1n5806us and urs graphs (continued) pad area ( sq in) figure 3 thermal r esistance vs fr4 p ad a rea a t a mbient pcb horizontal (for each pad) with 1, 2, and 3 oz copper v f (v) figure 4 forward v oltage vs f orward c urrent i f (v) thermal resistance ( o c/w ) downloaded from: http:///
t4 - lds - 0211 - 1, rev . 1 (111 900 ) ?2011 microsemi corporation page 5 of 5 1n5802us, 1n5804us, 1n5806us and urs package dimensions notes: 1. dimensions are in inches. 2. millimeters are given for general information only. 3. dimensions are pre - solder dip. 4. minimum clearance of glass body to mounting surface on all orientations. 5. cathode marking to be either in color band, three dots spaced equally or a color do t on the face of the end tab. 6. color dots will be .020 inch (0.51 mm) diameter minimum and those on the face of the end tab shall not lie within .020 inch (0 .51 mm) of the mounting surface. 7. in accordance with asme y14.5m, diameters are equivalent to x symbology. 8. on urs one end cap shall be square and the other end cap shall be round. dimensions ltr inch millimeters notes min max min max bd .091 .103 2.31 2.62 8 bl .168 .200 4.27 5.08 ect .019 .028 0.48 0.71 8 s .003 0. 08 pad layout note: if mounting requires adhesive separate from the solder, an additional 0.080 inch diameter contact may be placed in the center between the pads as an optional spot for cement. dim inch millimeters a 0.288 7.32 b 0.070 1.78 c 0.155 3.94 downloaded from: http:///
|
